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Ordering number : ENA1000
MCH3475
SANYO Semiconductors
DATA SHEET
MCH3475
Features
* *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Ultrahigh-speed switching. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) Conditions Ratings 30 20 1.8 7.2 0.8 150 --55 to +150 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.9A ID=0.9A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.2 0.66 1.1 135 230 88 19 11 180 330 Ratings min 30 1 10 2.6 typ max Unit V A A V S m m pF pF pF
Marking : FG
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1207PE TI IM TC-00001029 No. A1000-1/4
MCH3475
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A IS=1.8A, VGS=0V Ratings min typ 3.4 3.6 10.5 4.0 2.0 0.33 0.29 0.86 1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7019A-003
Switching Time Test Circuit
VIN
2.0 0.15
VDD=15V
0.25
10V 0V VIN
0 to 0.02
3
2.1 1.6
D
PW=10s D.C.1%
ID=0.9A RL=16.7 VOUT
1
0.25
0.65
2
0.3
G
0.85
P.G
50
S
MCH3475
0.07
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
1.8
ID -- VDS
6.0V
2.0
ID -- VGS
VDS=10V
4.0 V
1.6 1.4
1.8 1.6
Drain Current, ID -- A
8.0V
Drain Current, ID -- A
1.2 1.0 0.8 0.6 0.4 0.2 0 0
10.0V
1.4 1.2 1.0 0.8 0.6 0.4
15.0V
3.5V
VGS=2.5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.2 0 0 0.5 1.0 1.5
2.0
2.5
--25 C
3.0
3.0V
Ta= 75 C
25 C
3.5
4.0
Drain-to-Source Voltage, VDS -- V
IT13107
Gate-to-Source Voltage, VGS -- V
IT13108
No. A1000-2/4
MCH3475
390
RDS(on) -- VGS
Ta=25C
390
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
360 330 300 270 240 210 180 150 120 90 0 2 4 6 8 10 12 14 16
360 330 300 270 240 210 180 150 120 90 60 --60 --40 --20 0 20 40 60 80 100 120 140 160
ID=0.5A 0.9A
=0. , ID =4V V GS
5A
VG
.9A I =0 10V, D S=
Gate-to-Source Voltage, VGS -- V
3
IT13109 3 2 1.0 7 5
Ambient Temperature, Ta -- C
IT13110
yfs -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 0.001
VDS=10V
Source Current, IS -- A
C 25
0.01 7 5 3 2
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Drain Current, ID -- A
5 3
5 7 1.0 IT13111
0.001 0.2
0.4
0.6
75C
0.8
3 2
Ta= --25 C 25C
= Ta
--2
C 5
3 2 0.1 7 5
75
C
1.0
1.2 IT13112
SW Time -- ID
VDD=15V VGS=10V
3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
2
td(off)
10 7 5
Ciss, Coss, Crss -- pF
100 7 5 3 2
Ciss
td(on)
3 2
tf
tr
Coss
Crss
10 7
1.0 0.1
5 2 3 5 7 1.0 2 3 5 IT13113 2 10 7 5 0 5 10 15 20 25 30 IT13114
Drain Current, ID -- A
10 9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=1.8A
IDP=7.2A ID=1.8A
8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain Current, ID -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
DC
op
er
10
ati on
PW10s 10 0 s 1m s 10 m s
0m
s
25 C )
(T a=
Operation in this area is limited by RDS(on).
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
Total Gate Charge, Qg -- nC
IT13115
Drain-to-Source Voltage, VDS -- V
IT13116
No. A1000-3/4
MCH3475
1.0
PD -- Ta
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
0.6
on
ac
er
am
ic
bo
0.4
ar
d(
90
0m
0.2
m2 0
.8m
m
)
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT13117
Note on usage : Since the MCH3475 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice.
PS No. A1000-4/4

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